Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors-Reference-Cited by-同舟云学术

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Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors

Published:2015-03-11 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Pradhan N. R.,Rhodes D.,Memaran S.,Poumirol J. M.,Smirnov D.,Talapatra S.,Feng S.,Perea-Lopez N.,Elias A. L.,Terrones M.,Ajayan P. M.,Balicas L.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep08979.pdf

Reference44 articles.

1. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides. Nat. Nanotechnol. 7, 699 (2014).

2. Chhowalla, M. et al. The Chemistry of Two-Dimensional Layered Transition Metal Dichalcogenide Nanosheets. Nat. Chem. 5, 263–275 (2013).

3. Zeng, H. L., Dai, J. F., Yao, W., Xiao, D. & Cui, X. D. Valley Polarization in MoS2 Monolayers by Optical Pumping. Nat. Nanotechnol. 7, 490–493 (2012).

4. Mak, K. F., He, K. L., Shan, J. & Heinz, T. F. Control of Valley Polarization in Monolayer MoS2 by Optical Helicity. Nat. Nanotechnol. 7, 494–498 (2012).

5. Kim, S. et al. High-Mobility and Low-Power Thin-Film Transistors Based on Multilayer MoS2 Crystals. Nat. Commun. 3, 1011 (2012).

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