Nitrogen interaction with hydrogen-terminated silicon surfaces at the atomic scale-Reference-Cited by-同舟云学术

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Nitrogen interaction with hydrogen-terminated silicon surfaces at the atomic scale

Published:2009-08-16 Issue:10 Volume:8 Page:825-830
ISSN:1476-1122
Container-title:Nature Materials
language:en
Short-container-title:Nature Mater

Author:

Dai Min,Wang Yu,Kwon Jinhee,Halls Mathew D.,Chabal Yves J.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://www.nature.com/articles/nmat2514.pdf

Reference37 articles.

1. Brewer, R. T. et al. Ammonia pretreatment for high-κ dielectric growth on silicon. Appl. Phys. Lett. 85, 3830–3832 (2004).

2. Wilk, G. D., Wallace, R. M. & Anthony, J. M. High-k gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 89, 5243–5275 (2001).

3. Hanyaloglu, B. F. & Aydil, E. S. Low temperature plasma deposition of silicon nitride from silane and nitrogen plasmas. J. Vac. Sci. Technol. A 16, 2794–2803 (1998).

4. Klaus, J. W., Ott, A. W., Dillon, A. C. & George, S. M. Atomic layer controlled growth of Si3N4 films using sequential surface reactions. Surf. Sci. 418, L14–L19 (1998).

5. Wang, Y., Dai, M., Rivillon, S., Ho, M. T. & Chabal, Y. J. In situ infrared absorption spectroscopy for thin films growth by atomic layer deposition. Proc. SPIE 6325, 63250G (2006).

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