Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell-Reference-Cited by-同舟云学术

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Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

Published:2015-11-03 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Park Tae Hyung,Song Seul Ji,Kim Hae Jin,Kim Soo Gil,Chung Suock,Kim Beom Yong,Lee Kee Jeung,Kim Kyung Min,Choi Byung Joon,Hwang Cheol Seong

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep15965.pdf

Reference21 articles.

1. Yang, J. J., Strukov, D. B. & Stewart, D. R. Memristive devices for computing. Nature Nanotechnology 8, 13–24 (2013).

2. Wong, H. S. P. et al. Metal-Oxide RRAM. Proc. IEEE 100, 1951–1970 (2012).

3. Lee, M.-J. et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures. Nature Materials 10, 625–630 (2011).

4. Lee, S. R. et al. Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory. Symposium on VLSI Technology (VLSIT), Honolulu, HI. Piscataway, NJ: IEEE. 71-72; 10.1109/VLSIT.2012.6242466 (2012, June 12-14).

5. Ninomiya, T. et al. Conductive filament scaling of TaOx bipolar ReRAM for long retention with low current operation. Symposium on VLSI Technology (VLSIT), Honolulu, HI. Piscataway, NJ: IEEE. 73-74; 10.1109/VLSIT.2012.6242467 (2012, June 12-14).

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