Single-step deposition of high-mobility graphene at reduced temperatures-Reference-Cited by-同舟云学术

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Single-step deposition of high-mobility graphene at reduced temperatures

Published:2015-03-18 Issue:1 Volume:6 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Boyd D.A.,Lin W.-H.,Hsu C.-C.,Teague M.L.,Chen C.-C.,Lo Y.-Y.,Chan W.-Y.,Su W.-B.,Cheng T.-C.,Chang C.-S.,Wu C.-I.,Yeh N.-C.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms7620.pdf

Reference32 articles.

1. Li, X. et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324, 1312 (2009) .

2. Hao, Y. et al. The role of surface oxygen in the growth of large single-crystal graphene on copper. Science 342, 720 (2013) .

3. Yan, Z. et al. Toward the synthesis of wafer-scale single-crystal graphene on copper foils. ACS Nano 6, 9110 (2012) .

4. Mun, J. H. & Cho, B. J. Synthesis of monolayer graphene having a negligible amount of wrinkles by stress relaxation. Nano Lett. 13, 2496 (2013) .

5. Guinea, F., Katsnelson, M. I. & Geim, A. K. Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering. Nat. Phys. 6, 30 (2010) .

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