Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

Published:2017-04-18 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Ma Dingyu,Rong Xin,Zheng Xiantong,Wang Weiying,Wang Ping,Schulz Tobias,Albrecht Martin,Metzner Sebastian,Müller Mathias,August Olga,Bertram Frank,Christen Jürgen,Jin Peng,Li Mo,Zhang Jian,Yang Xuelin,Xu Fujun,Qin Zhixin,Ge Weikun,Shen Bo,Wang Xinqiang

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep46420.pdf

Reference32 articles.

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2. Fiori, G. et al. Electronics based on two-dimensional materials. Nat. nanotech. 9, 768 (2014).

3. Miao, M. S. et al. Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well. Phys. Rev. Lett. 109, 186803 (2012).

4. Pan, W. et al. Two-dimensional electron gas in monolayer InN quantum wells. Appl. Phys. Lett. 105, 213503 (2014).

5. Chang, J. Y. et al. Advantages of blue InGaN light-emitting diodes with AlGaN barriers. Opt. Lett. 35, 1368 (2010).

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