Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep11480.pdf
Reference42 articles.
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2. Huang, K. Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons. Sci. Rep. 4, 4380 (2014).
3. Yang, W. et al. High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability. Sci. Rep. 4, 5166 (2014).
4. Reitmeier, Z. J. et al. Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H–SiC(0001) substrates. Acta Mater. 58, 2165–2175 (2010).
5. Lin, K. L. et al. MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AlN buffer. Phys. Status Solidi C 5, 1536–1538 (2008).
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