High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability-Reference-Cited by-同舟云学术

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High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

Published:2014-06-05 Issue:1 Volume:4 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Yang Weihuang,Li Jinchai,Zhang Yong,Huang Po-Kai,Lu Tien-Chang,Kuo Hao-Chung,Li Shuping,Yang Xu,Chen Hangyang,Liu Dayi,Kang Junyong

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep05166.pdf

Reference46 articles.

1. Fujikawa, S., Takano, T., Kondo, Y. & Hirayama, H. Realization of 340-nm-band high-output-power (>7 mW) InAlGaN quantum well ultraviolet light-emitting diode with p-type InAlGaN. Jpn. J. Appl. Phys. 47, 2941 (2008).

2. Hirayama, H., Noguchi, N., Yatabe, T. & Kamata, N. 227 nm AlGaN light-emitting diode with 0.15 mW output power realized using a thin quantum well and AlN buffer with reduced threading dislocation density. Appl. Phys. Express 1, 051101 (2008).

3. Khan, A., Balakrishnan, K. & Katona, T. Ultraviolet light-emitting diodes based on group three nitrides. T. Nature Photonics 2, 77 (2008).

4. Chitnis, A. et al. Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes. Appl. Phys. Lett. 82, 2565 (2003).

5. Adivarahan, V. et al. Robust 290 nm emission light emitting diodes over pulsed laterally overgrown AlN. Jpn. J. Appl. Phys. 46, L877 (2007).

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