Author:
Borgschulte Andreas,Sambalova Olga,Delmelle Renaud,Jenatsch Sandra,Hany Roland,Nüesch Frank
Publisher
Springer Science and Business Media LLC
Reference39 articles.
1. Heat of formation of transition metal oxides is of the order of several 100 kJ/mol O, to be compared to the heats of hydride formation of several 10 kJ/mol H2 and the heat of water formation of 240 kJ/mol; from: Barin, I. Thermochemical Data of Pure Substances 3rd edition. (VCH, 1995).
2. Borgschulte, A., Bielmann, M., Züttel, A., Barkhordarian, G., Dornheim, M. & Bormann, R. Hydrogen dissociation on oxide covered MgH2 by catalytically active vacancies. Appl. Surf. Sci. 254, 2377–2384 (2008).
3. Holleman, A. F., Wiberg, E. & Wiberg, N. Lehrbuch der Anorganischen Chemie 102nd edition. (Gruyter, 2007).
4. Chen, W. P., He, K. F., Wang, Y., Chan, H. L. W. & Yan, Z. Highly mobile and reactive state of hydrogen in metal oxide semiconductors at room temperature. Sci. Rep. 3, 3149, 10.1038/srep03149 (2013).
5. Van de Walle, C. G. & Neugebauer, J. Universal alignment of hydrogen levels in semiconductors, insulators and solutions. Nature 423, 626–628 (2003).
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