Field-effect transistors based on cubic indium nitride
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep03951.pdf
Reference14 articles.
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2. Kuzmik, J. & Georgakilas, A. Proposal of High-electron mobility transistors with strained InN channel. IEEE Trans. Electron Devices 58, 720–724 (2011).
3. Lin, Y.-S. et al. High current density InN/AlN heterojunction field-effect transistor with a SiNx gate dielectric layer. Appl. Phys. Lett. 90, 142111 (2007).
4. Ng, Y. F., Cao, Y. G., Xie, M. H., Wang, X. L. & Tong, S. Y. Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy. Appl. Phys. Lett. 81, 3960 (2002).
5. Wang, X. et al. High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy. Appl. Phys. Express 5, 015502 (2012).
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