Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1523638
Reference22 articles.
1. GaN, AlN, and InN: A review
2. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
3. Metalorganic vapor phase epitaxy growth of (InxGa1-xN/GaN)n layered structures and reduction of indium droplets
4. Incorporation of indium during molecular beam epitaxy of InGaN
5. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
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