High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy-Reference-Cited by-同舟云学术

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High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

Published:2012-01 Issue:1 Volume:5 Page:015502
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Wang Xinqiang,Liu Shitao,Ma Nan,Feng Li,Chen Guang,Xu Fujun,Tang Ning,Huang Sen,Chen Kevin J.,Zhou Shengqiang,Shen Bo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=1/a=015502/pdf

Reference23 articles.

1. Band gaps of InN and group III nitride alloys

2. Molecular beam epitaxy growth of GaN, AlN and InN

3. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

4. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

5. Effect of charged dislocation scattering on electrical and electrothermal transport inn-type InN

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