Study on the preparation of InN films under different substrates and nitrogen-argon flow ratios and the effect of operating temperature on carrier transport in p-NiO/n-InN heterojunctions-Reference-Cited by-同舟云学术

Study on the preparation of InN films under different substrates and nitrogen-argon flow ratios and the effect of operating temperature on carrier transport in p-NiO/n-InN heterojunctions

Published:2024-02 Issue: Volume:220 Page:112805
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Zhang Jinming,Peng Wenbo,Zhou Yijian,Xiang Guojiao,Liu Yue,Zhang Jiahui,Zhang Xian,Yue Zhiang,He Hangyu,Wang Lukai,Wang Yang,Wang Hui^ORCID,Zhao Yang

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference52 articles.

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3. When group-III nitrides go infrared: new properties and perspectives;Wu;J. Appl. Phys.,2009

4. Photoluminescent properties of InN epifilms;Fu;Semicond. Sci. Technol.,2006

5. Low-field electron mobility in wurtzite InN;Polyakov;Appl. Phys. Lett.,2006

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