Author:
Shin ChaeHo,Kim Kyongjun,Kim JeongHoi,Ko Wooseok,Yang Yusin,Lee SangKil,Jun Chung Sam,Kim Youn Sang
Publisher
Springer Science and Business Media LLC
Reference23 articles.
1. Shafai, C. et al. Delineation of semiconductor doping by scanning resistance microscopy. Appl. Phys. Lett. 64, 342 (1994).
2. Kim, D. C. et al. Improvement of resistive memory switching in NiO using IrO2 . Appl. Phys. Lett. 88, 232106 (2006).
3. Kim, D. C. et al. Electrical observations of filamentary conductions for the resistive memory switching in NiO films. Appl. Phys. Lett. 88, 202102 (2006).
4. Sakai, T., Oda, N. & Yokoyama, T. Defects isolation and characterization in contact array/chain structures by using voltage contrast effect. IEEE international Symposium. 195–198 (1999).
5. Li-Lung, L., Gao, H. & Xiao, H. Surface effect on SEM voltage contrast and dopant contrast. ISTFA 2009 Proceedings. 202–207 (2009).
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