Improvement of resistive memory switching in NiO using IrO2-Reference-Cited by-同舟云学术

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Improvement of resistive memory switching in NiO using IrO2

Published:2006-06-05 Issue:23 Volume:88 Page:232106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim D. C.,Lee M. J.,Ahn S. E.,Seo S.,Park J. C.,Yoo I. K.,Baek I. G.,Kim H. J.,Yim E. K.,Lee J. E.,Park S. O.,Kim H. S.,Chung U-In,Moon J. T.,Ryu B. I.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2210087

Reference10 articles.

1. Reproducible resistance switching in polycrystalline NiO films

2. Conductivity switching characteristics and reset currents in NiO films

3. Preparation of Pb(Zr,Ti)O3thin films on electrodes including IrO2

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