Electric-field-enhanced crystallization of amorphous silicon
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/26711.pdf
Reference9 articles.
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3. Kawazu, Y., Kudo, H., Onari, S. & Arai, T. Low temperature crystallization of hydrogenated amorphous silicon induced by nickel silicide formation. Jpn J. Appl. Phys. 29, 2698–2704 (1990).
4. Ryu, J. I., Kim, H. C., Kim, S. K. & Jang, J. Anovel self-aligned polycrystalline silicon thin-film transistor using silicide layers. IEEE Electron Device Lett. 18, 272–274 (1997).
5. Murarka, S. P. Metallization: Theory and Practice for VLSI and ULSI Ch. 2 (Butterworth-Heineman, Boston, 1993).
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