High spectral response of self-driven GaN-based detectors by controlling the contact barrier height
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep16819.pdf
Reference19 articles.
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2. Ozbay, E. et al. High-performance solar-blind photodectors based on AlxGa1-xN heterostructures. IEEE J. Quantum Electron. 10(4), 742–751 (2004).
3. Pearton, S. J., Zolper, J. C., Shul, R. J. & Ren, F. GaN: Processing, defects and devices. J. Appl. Phys. 86(1), 1–78 (1999).
4. Chen, Q. et al. Schottky barrier detectors on GaN for visible–blind ultraviolet detection. Appl. Phys. Lett. 70(17), 2277–2279 (1997).
5. Katz, O., Garber, V., Meyler, B., Bahir, G. & Salzman, J. Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry. Appl. Phys. Lett. 80(3), 347 (2002).
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