Abstract
Abstractα-Sn and SnGe alloys are attracting attention as a new family of topological quantum materials. However, bulk α-Sn is thermodynamically stable only below 13∘C. Moreover, scalable integration of α-Sn quantum materials and devices on silicon is hindered by their large lattice mismatch. Here, we grow compressively strained α-Sn doped with 2-4 at.% germanium on a native oxide layer on a silicon substrate at 300–500∘C. Growth is found to occur by a reversed β-Sn to α-Sn phase transformation without relying on epitaxy, with germanium-rich GeSn nanoclusters in the as-deposited material acting as seeds. The size of α-Sn microdots reaches up to 200 nm, which is approximately ten times larger than the upper size limit for α-Sn formation reported previously. Furthermore, the compressive strain makes it a candidate 3D topological Dirac semimetal with possible applications in spintronics. This process can be further optimized to achieve optically tunable SnGe quantum material and device integration on silicon.
Funder
United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research
National Science Foundation
Publisher
Springer Science and Business Media LLC
Subject
Mechanics of Materials,General Materials Science
Cited by
4 articles.
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