Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
Author:
Funder
National Natural Science Foundation of China
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-47049-z.pdf
Reference31 articles.
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3. Aarik, J. et al. Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures. Appl. Surf. Sci. 173, 15–21 (2001).
4. Niinistö, J., Kukli, K., Heikkilä, M., Ritala, M. & Leskelä, M. Atomic layer deposition of high-k oxides of the group 4 metals for memory applications. Adv. Eng. Mater. 11, 223–234 (2009).
5. Zhang, W. et al. Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition. Nanoscale Res. Lett. 12, 393–1~11 (2017).
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