Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-11165-5.pdf
Reference50 articles.
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4. Pan, F., Gao, S., Chen, C., Song, C. & Zeng, F. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance. Mater. Sci. Eng. R 83, 1–59 (2014).
5. Zhuge, F. et al. Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments. Nanotechnology 22, 275204 (2011).
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