Electronic Transport and Resistive Switching Properties in Topotactic SrFe1–xCoxO2.5 Devices-Reference-Cited by-同舟云学术

Electronic Transport and Resistive Switching Properties in Topotactic SrFe_1–xCo_xO_2.5 Devices

Published:2024-04-22 Issue:5 Volume:6 Page:3264-3273
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Sasindrababu Harisankar¹²^ORCID,Nallagatla Venkata Raveendra¹³,Le Duc Duy⁴,Song Bingqian⁴,Park Heung-Sik⁴^ORCID,Cho Jung Woo⁵,Chae Seung Chul⁵^ORCID,Lee Eunsu⁶,Yang Chan-Ho⁴^ORCID,Jung Chang Uk¹^ORCID

Affiliation:

1. Department of Physics and Memory and Catalyst Research Center, Hankuk University of Foreign Studies, Yongin 449-791, Republic of Korea

2. Institute of Physics, Bhubaneswar 751005, India

3. Silicon Austria Laboratories GmbH, Sandgasse 34, A-8010 Graz, Austria

4. Department of Physics and Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea

5. Department of Physics Education, Seoul National University, Seoul 08826, Republic of Korea

6. Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea

Funder

National Research Foundation of Korea

Hankuk University of Foreign Studies

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00107

Reference40 articles.

1. Effects of the Heterointerface on the Growth Characteristics of a Brownmillerite SrFeO2.5 Thin Film Grown on SrRuO3 and SrTiO3 Perovskites

2. Complementary Resistive Switching and Synaptic-Like Memory Behavior in an Epitaxial SrFeO2.5 Thin Film through Oriented Oxygen-Vacancy Channels

3. Resistance switching in epitaxial SrCoOx thin films

4. Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory

5. Manipulating the Resistive Switching in Epitaxial SrCoO_2.5 Thin-Film-Based Memristors by Strain Engineering