Understanding contact gating in Schottky barrier transistors from 2D channels
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-12816-3.pdf
Reference59 articles.
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5. Larentis, S., Fallahazad, B. & Tutuc, E. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers. Appl. Phys. Lett. 101, 223104 (2012).
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