The Role of Metal−Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors
Author:
Affiliation:
1. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, and Institute of Thin Film and Interfaces and Center of Nanoelectronic Systems, Forschungszentrum Julich, D-52454, Julich, Germany
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl0508624
Reference26 articles.
1. Room-temperature transistor based on a single carbon nanotube
2. Single- and multi-wall carbon nanotube field-effect transistors
3. Lateral Scaling in Carbon-Nanotube Field-Effect Transistors
4. High-Field Quasiballistic Transport in Short Carbon Nanotubes
5. Extraordinary Mobility in Semiconducting Carbon Nanotubes
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