A study on mechanism of resistance distribution characteristics of oxide-based resistive memory
Author:
Funder
National Research Foundation of Korea
Ministry of Trade, Industry and Energy
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-35838-x.pdf
Reference13 articles.
1. Hur, J. H., Lee, M.-J., Lee, C. B., Kim, Y.-B. & Kim, C.-J. Modeling for bipolar resistive memory switching in transition-metal oxides. Physical Review B 82, 155321 (2010).
2. Hur, J.-H. et al. Modeling for multilevel switching in oxide-based bipolar resistive memory. Nanotechnology 23, 225702 (2012).
3. Hur, J.-H., Ryul Lee, S., Lee, M.-J., Cho, S.-H. & Park, Y. Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method. Applied Physics Letters 103, 113504 (2013).
4. Ielmini, D. & Waser, R. Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications. (John Wiley & Sons 2015).
5. Lee, M.-J. et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures. Nature materials 10, 625 (2011).
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