Universal Memory Characteristics and Degradation Features of ZrO 2 ‐Based Bipolar Resistive Memory-Reference-Cited by-同舟云学术

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Universal Memory Characteristics and Degradation Features of ZrO 2 ‐Based Bipolar Resistive Memory

Published:2020-07-21 Issue:8 Volume:6 Page:2000368
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Hur Ji‐Hyun¹²^ORCID,Lee Dongsoo³

Affiliation:

1. Department of Electronic EngineeringSejong University 209, Neungdong‐ro, Gwangjin‐gu Seoul 05006 Republic of Korea

2. Hur Advanced Research 96, Dongtanbanseok‐ro Hwasung‐si Gyeonggi‐do 18456 Republic of Korea

3. Process Development TeamSemiconductor R&D CenterSamsung Electronics Co., Ltd San 16, Banwol‐Dong Hwasung‐si Gyeonggi‐do 447‐701 Republic of Korea

Funder

Ministry of Education, Science and Technology

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000368

Reference23 articles.

1. The 4th Industrial Revolution

2. Toward a Universal Memory

3. Current status of resistive nonvolatile memories

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modifying the native aluminum oxide layer by simple methods for fabricating write-once-read-many memory devices;Journal of Materials Science: Materials in Electronics;2023-05

2. First-principles simulation of neutral and charged oxygen vacancies in m-ZrO₂: an origin of filamentary type resistive switching;Nanotechnology;2022-06-07

3. Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content;Ceramics International;2022-02

4. Multilevel resistive switching performance of TiO2-based flexible memory prepared by low-temperature sol-gel method with UV irradiation;Current Applied Physics;2021-04

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