A New Analytic Formula for Minority Carrier Decay Length Extraction from Scanning Photocurrent Profiles in Ohmic-Contact Nanowire Devices
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-46020-2.pdf
Reference52 articles.
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2. Allen, J. E., Hemesath, E. R. & Lauhon, L. J. Scanning Photocurrent Microscopy Analysis of Si Nanowire Field-Effect Transistors Fabricated by Surface Etching of the Channel. Nano Lett. 9, 1903–1908 (2009).
3. Graham, R., Miller, C., Oh, E. & Yu, D. Electric Field Dependent Photocurrent Decay Length in Single Lead Sulfide Nanowire Field Effect Transistors. Nano Lett. 11, 717–722 (2011).
4. Mohite, A. D. et al. Highly Efficient Charge Separation and Collection across in Situ Doped Axial VLS-Grown Si Nanowire p–n Junctions. Nano Lett. 12, 1965–1971 (2012).
5. Son, B. H. et al. Imaging Ultrafast Carrier Transport in Nanoscale Field-Effect Transistors. ACS Nano 8, 11361–11368 (2014).
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