Scanning Photocurrent Microscopy Analysis of Si Nanowire Field-Effect Transistors Fabricated by Surface Etching of the Channel
Author:
Affiliation:
1. Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl803924z
Reference21 articles.
1. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications
2. International Technology Roadmap for Semiconductors, 2007 ed.http://www.itrs.net/Links/2007ITRS/Home2007.htm.
3. Synthesis and Fabrication of High-Performance n-Type Silicon Nanowire Transistors
4. High Performance Silicon Nanowire Field Effect Transistors
5. Ge/Si nanowire heterostructures as high-performance field-effect transistors
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