Author:
Ditalia Tchernij S.,Lühmann T.,Corte E.,Sardi F.,Picollo F.,Traina P.,Brajković M.,Crnjac A.,Pezzagna S.,Pastuović Ž.,Degiovanni I. P.,Moreva E.,Aprà P.,Olivero P.,Siketić Z.,Meijer J.,Genovese M.,Forneris J.
Abstract
AbstractWe report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600–750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600–670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.
Funder
Horizon 2020 Framework Programme
H2020 Future and Emerging Technologies
Ministero dell’Istruzione, dell’Università e della Ricerca
European Metrology Programme for Innovation and Research
Regione Piemonte
International Atomic Energy Agency
Compagnia di San Paolo
Publisher
Springer Science and Business Media LLC
Cited by
10 articles.
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