Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe-Reference-Cited by-同舟云学术

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Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe

Published:2019-08-05 Issue:1 Volume:9 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Huang Tsung-Lin,Peng Kang-Ping,Chen Ching-Lun,Lin Horng-Chih,George Tom,Li Pei-Wen

Funder

Ministry of Science and Technology, Taiwan

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-019-47806-0.pdf

Reference23 articles.

1. Dennis, E., Kitaev, A., Landahl, A. & Preskill, J. Topological quantum memory. J. Math. Phys. 43, 4452–4505, https://doi.org/10.1063/1.1499754 (2002).

2. Mi, X. et al. A coherent spin-photon interface in silicon. Nature 555, 599–606, https://doi.org/10.1038/nature25769 (2018).

3. Mehta, K. K. et al. Integrated optical addressing of an ion qubit. Nature Nanotechnology 11, 1066–1070, https://doi.org/10.1038/nnano.2016.139 (2016).

4. Devoret, M. H. & Schoelkopf, R. J. Superconducting circuits for quantum information: an outlook. Science 339, 1169–1174, https://doi.org/10.1126/science.1231930 (2013).

5. London, P. et al. Detecting and polarizing nuclear spins with double resonance on a single electron spin. Phys. Rev. Lett. 111, 067601-1–067601-5, https://doi.org/10.1103/PhysRevLett.111.067601 (2013).

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5. Germanium Spherical Quantum-Dot Single-Hole Transistors With Self-Organized Tunnel Barriers and Self-Aligned Electrodes;IEEE Journal of the Electron Devices Society;2023

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