Impact of microscopic In fluctuations on the optical properties of InxGa1-xN blue light-emitting diodes assessed by low-energy X-ray fluorescence mapping using synchrotron radiation-Reference-Cited by-同舟云学术

Impact of microscopic In fluctuations on the optical properties of InxGa1-xN blue light-emitting diodes assessed by low-energy X-ray fluorescence mapping using synchrotron radiation

Published:2019-03-06 Issue:1 Volume:9 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Sakaki Atsushi^ORCID,Funato Mitsuru,Miyano Munehiko,Okazaki Toshiyuki,Kawakami Yoichi

Funder

MEXT | Japan Society for the Promotion of Science

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-019-39086-5.pdf

Reference28 articles.

1. Nakamura, S., Pearton, S. & Fasol, G. Blue Laser Diode (Springer, Heidelberg, 2000) 2nd ed.

2. Nakamura, S. & Mukai, T. High-quality InGaN films grown on GaN films. Jpn. J. Appl. Phys. 31, L1457–L1459 (1992).

3. Yoshimoto, N., Matsuoka, T., Sasaki, T. & Katsui, A. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 59, 2251–2253 (1991).

4. Ho, I.-h. & Stringfellow, G. B. Solid phase immiscibility in GaInN. Appl. Phys. Lett. 69, 2701–2703 (1996).

5. Narukawa, Y., Kawakami, Y., Fujita, S., Fujita, S. & Nakamura, S. Recombination dynamics of localized excitons n In0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells. Phys. Rev. B 55, R1938–R1941 (1997).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical properties of Zn-Sn-N films governed by the Zn/(Zn + Sn) ratio;Journal of Vacuum Science & Technology A;2023-04-21

2. Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs;Journal of Physics D: Applied Physics;2021-09-20

3. Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach;CrystEngComm;2021

4. Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum Wells;ACS Applied Materials & Interfaces;2019-05-30