Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum Wells-Reference-Cited by-同舟云学术

Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum Wells

Published:2019-05-30 Issue:25 Volume:11 Page:22834-22839
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zoellner Marvin Hartwig¹^ORCID,Chahine Gilbert André²³,Lahourcade Lise⁴,Mounir Christian⁵,Manganelli Costanza Lucia¹,Schülli Tobias Urs²,Schwarz Ulrich Theodor⁴⁶,Zeisel Roland⁴,Schroeder Thomas¹⁷

Affiliation:

1. IHP—Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

2. European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex, France

3. Université Grenoble Alpes, CNRS, Grenoble INP, SIMAP, 38000 Grenoble, France

4. OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany

5. Department of Microsystems Engineering (IMTEK), University of Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany

6. Institute of Physics, Technische Universität Chemnitz, Reichenhainer Straße 70, 09126 Chemnitz, Germany

7. Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born Str. 2, 12489 Berlin, Germany

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b04431

Reference46 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Prospects for LED lighting

3. Background Story of the Invention of Efficient InGaN Blue-Light-Emitting Diodes (Nobel Lecture)

4. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

5. Enhancement of light extraction from light emitting diodes

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