A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels-Reference-Cited by-同舟云学术

A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

Published:2017-10-27 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Jo Hyunjin,Choi Jeong-Hun,Hyun Cheol-Min,Seo Seung-Young,Kim Da Young,Kim Chang-Min,Lee Myoung-Jae^ORCID,Kwon Jung-Dae,Moon Hyoung-Seok,Kwon Se-Hun,Ahn Ji-Hoon

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-14649-6.pdf

Reference44 articles.

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2. Du., H., Lin, X., Xu, Z. & Chu, D. Electric Double-Layer Transistors: A Review of Recent Progress. J. Mater. Sci. 50, 5641–5673 (2015).

3. Perera, M. M. et al. Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating. ACS Nano 7, 4449–4458 (2013).

4. Ye, J. T. et al. Liquid-Gated Interface Superconductivity on an Atomically Flat Film. Nat. Mater. 9, 125–128 (2010).

5. Yuan, H. et al. High-Density Carrier Accumulation in ZnO Field-Effect Transistor Gated by Electric Double Layer of Ionic Liquid. Adv. Funct. Mater. 19, 1046–1053 (2009).

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