Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors-Reference-Cited by-同舟云学术

Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors

Published:2010-12-08 Issue:51 Volume:132 Page:18402-18407
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Yuan Hongtao¹,Shimotani Hidekazu¹,Ye Jianting¹,Yoon Sungjae¹,Aliah Hasniah¹,Tsukazaki Atsushi¹,Kawasaki Masashi¹,Iwasa Yoshihiro¹

Affiliation:

1. Quantum Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan, Japan Science and Technology Agency (CREST), Kawaguchi 332-0012, Japan, Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan, and WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja108912x

Reference31 articles.

1. Electrostatic modification of novel materials

2. Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic

3. Electric-field-induced superconductivity in an insulator

4. Liquid-gated interface superconductivity on an atomically flat film

5. Direct comparison of field-effect and electrochemical doping in regioregular poly(3-hexylthiophene)

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