Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating-Reference-Cited by-同舟云学术

Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating

Published:2013-04-23 Issue:5 Volume:7 Page:4449-4458
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Perera Meeghage Madusanka¹,Lin Ming-Wei¹,Chuang Hsun-Jen¹,Chamlagain Bhim Prasad¹,Wang Chongyu¹,Tan Xuebin²,Cheng Mark Ming-Cheng²,Tománek David³,Zhou Zhixian¹

Affiliation:

1. Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, United States

2. Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202, United States

3. Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn401053g

Reference48 articles.

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3. Two-Dimensional Phonon Transport in Supported Graphene

4. Ultrahigh electron mobility in suspended graphene

5. Chaotic Dirac Billiard in Graphene Quantum Dots

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