Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration-Reference-Cited by-同舟云学术

Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration

Published:2017-11-07 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Holland Martin,van Dal Mark,Duriez Blandine,Oxland Richard,Vellianitis Georgios,Doornbos Gerben,Afzalian Aryan,Chen Ta-Kun,Hsieh Chih-Hua,Ramvall Peter,Vasen Tim,Yeo Yee-Chia,Passlack Matthias

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-15025-0.pdf

Reference26 articles.

1. Akiyama, M., Kawarada, Y. & Kaminishi, K. Growth of GaAs on Si by MOCVD. J. Crystal Growth 68, 21–26 (1984).

2. Soga, T., Hattori, S., Takeyasu, M. & Umeno, M. Characterization of epitaxially grown GaAs on Si substrates with III-V compounds intermediate layers by metalorganic chemical vapor deposition. J. Appl. Phys. 57, 4578–4582 (1985).

3. Itoh, Y., Nishioka, T., Yamamoto, A. & Yamaguchi, M. GaAs heteroepitaxial growth on silicon for solar cells. Appl. Phys. Lett. 52, 1617–1619 (1988).

4. Carlina, J. A., Ringel, S. A., Fitzgerald, E. A., Bulsara, M. & Keyes, B. M. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates. Appl. Phys. Lett. 76, 1884–1886 (2000).

5. Fang, S. F. et al. Gallium arsenide and other compound semiconductors on silicon. J. Appl. Phys. 68, R31–R58 (1990).

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