Strain-stress study of AlxGa1−xN/AlN heterostructures on c-plane sapphire and related optical properties
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-46628-4.pdf
Reference50 articles.
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2. Liu, Z. et al. p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue light-emitting diodes. Appl. Phys. Lett. 101, 261106 (2012).
3. Kucukgok, B. et al. Structural and optical analyses of AlxGa1−x N thin films grown by metal organic chemical vapor deposition. Jpn. J. Appl. Phys. 54, 02BA05 (2015).
4. Hurwitz, E. N. et al. Thermopower Study of GaN-Based Materials for Next-Generation Thermoelectric Devices and Applications. J. Electron. Mater. 40, 513–517 (2011).
5. Li, D., Jiang, K. E., Sun, X. & Guo, A. C. AlGaN photonics: recent advances in materials and ultraviolet devices. Adv. Opt. Photonics 10 (2018).
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