Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors
Author:
Funder
National Research Foundation of Korea (NRF)
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-32233-4.pdf
Reference37 articles.
1. Nomura, K. et al. Room Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors. Nature 432, 488 (2004).
2. Wang., L. et al. High-performance Transparent Inorganic-organic Hybrid Thin-film N-type Transistors. Nat. Mater. 5, 893 (2006).
3. Nomura, K. et al. Thin-film Transistor Fabricated in Single-crystalline Transparent Oxide Semiconductor. Science 300, 1269 (2003).
4. Sun, Y. & Rogers, J. A. Inorganic Semiconductors for Flexible Electronics. Adv. Mater. 19, 1897 (2007).
5. Fortunato, E. M. C. et al. Fully Transparent ZnO Thin-film Transistor Produced at Room Temperature. Adv. Mater. 17, 590 (2005).
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