Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-16803-6.pdf
Reference43 articles.
1. Allain, A., Kang, J., Banerjee, K. & Kis, A. Electrical contacts to two-dimensional semiconductors. Nature Mater. 14, 1195–1205 (2015).
2. Dimoulas, A., Tsipas, P., Sotiropoulos, A. & Evangelou, E. K. Fermi-level pinning and charge neutrality level in germanium. Appl. Phys. Lett. 89, 252110 (2006).
3. Nishimura, T., Kita, K. & Toriumi, A. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface. Appl. Phys. Lett. 91, 123123 (2007).
4. Nishimura, T., Kita, K. & Toriumi, A. Significant shift of Schottky barrier heights at strongly pinned metal/germanium interface by inserting an ultra-thin insulating film. Appl Phys Express 1, 051406 (2008).
5. Ikeda, K. et al. Modulation of NiGe/Ge Schottky barrier height by sulphur segregation during Ni germanidation. App Phys Lett 88, 152115 (2006).
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Optimized infrared light response speed <80 ms by applying an interface buffer layer to Schottky components;Infrared Sensors, Devices, and Applications XIII;2023-10-10
2. In Situ Study of the Interface-Mediated Solid-State Reactions during Growth and Postgrowth Annealing of Pd/a-Ge Bilayers;ACS Applied Materials & Interfaces;2023-02-15
3. Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge0.89Sn0.11;Journal of Applied Physics;2022-03-14
4. Analytical Model of Contact Resistance in Vertically Stacked Nanosheet FETs for Sub-3-nm Technology Node;IEEE Transactions on Electron Devices;2022-03
5. NiSi2/p-Si Schottky Junction Photocathode with a High-Quality Epitaxial Interface for Efficient Hydrogen Evolution;ACS Applied Energy Materials;2021-09-29
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3