Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep04179.pdf
Reference43 articles.
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4. Nakamura, S. et al. InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode. Jpn. J. Appl. Phys. 37, L1020–1022 (1998).
5. Edmonda, J. et al. High efficiency GaN-based LEDs and lasers on SiC. J. Cryst. Growth 272, 242–250 (2004).
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