GaN-Based Cascade Micro Light-Emitting Diode in Parallel and Series Arrays for Visible Light Communication-Reference-Cited by-同舟云学术

GaN-Based Cascade Micro Light-Emitting Diode in Parallel and Series Arrays for Visible Light Communication

Published:2023-06 Issue:3 Volume:15 Page:1-4
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Liang Shihao¹^ORCID,Wang Guobin²,Tao Tao¹^ORCID,Xu Feifan¹^ORCID,Chen Kai¹,Zhi Ting³,Zhu Zhifang¹,Chen Wenjuan⁴,Li Yong⁴,Xu Ke²,Liu Bin¹^ORCID,Zhang Rong¹

Affiliation:

1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China

2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, China

3. College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China

4. Lohua Chip-Display Technology Development (Jiangsu) Company, Ltd., Nantong, China

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Leading-Edge Technology Program of Jiangsu Natural Science Foundation

The Science Foundation of Jiangsu Province

The Fundamental Research Foundation for the Central Universities

Solid State Lighting and Energy-Savings Electronics Collaborative Innovation Center

The Foundation of Lohua Chip-Display Technology Development Company, Ltd.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/4563994/10101698/10136730.pdf?arnumber=10136730

Reference20 articles.

1. High-Speed Visible Light Communications Using Individual Pixels in a Micro Light-Emitting Diode Array

2. High-Bandwidth Green Semipolar (20–21) InGaN/GaN Micro Light-Emitting Diodes for Visible Light Communication

3. Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

4. Correlation between photoluminescence and electroluminescence in GaN-related micro light emitting diodes: Effects of leakage current, applied bias, incident light absorption and carrier escape

5. High-Speed Parallel Micro-LED Arrays on Si Substrates Based on Via-Holes Structure for Visible Light Communication

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