Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells-Reference-Cited by-同舟云学术

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Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells

Published:2024-05 Issue: Volume:48 Page:104358
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

de Oliveira Fernando M.^ORCID,Kuchuk Andrian V.,Ghosh Pijush K.,Ware Morgan E.^ORCID,Mazur Yuriy I.,Salamo Gregory J.

Publisher

Elsevier BV

Reference45 articles.

1. Recent progress in group III-nitride nanostructures: From materials to applications;Chen;Mater. Sci. Eng.: R: Rep.,2020

2. Deep ultraviolet detectors based on wide bandgap semiconductors: a review;Hao;J. Nanopart. Res.,2023

3. Piezotronics enabled artificial intelligence systems;Hua;J. Phys.: Mater.,2021

4. Room-Temperature Solid-State Quantum Emitters in the Telecom Range;Mu;Adv. Quantum. Technol.,2021

5. III-nitrides based resonant tunneling diodes;Lin;J. Phys. D: Appl. Phys.,2020

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