Defect-free high Sn-content GeSn on insulator grown by rapid melting growth
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep38386.pdf
Reference36 articles.
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2. Gallagher, J. D., Senaratne, C. L., Kouvetakis, J. & Menéndez, J. Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys. Appl. Phys. Lett. 105, 142102 (2014).
3. Roucka, R., Mathews, J., Beeler, R. T., Tolle, J., Kouvetakis, J. & Menendez, J. Direct gap electroluminescence from Si/Ge1-ySny p-i-n heterostructure diodes. Appl. Phys. Lett. 98, 061109 (2011).
4. Wirths, S. et al. Lasing in direct-bandgap GeSn alloy grown on Si. Nature Photon. 9, 88–92 (2015).
5. Su, S. et al. GeSn p-i-n photodetector for all telecommunication bands detection. Opt. Express 19, 6408–6413 (2011).
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