Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer-Reference-Cited by-同舟云学术

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Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer

Published:2016-10-19 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Wu Chenping,Soomro Abdul Majid,Sun Feipeng,Wang Huachun,Huang Youyang,Wu Jiejun,Liu Chuan,Yang Xiaodong,Gao Na,Chen Xiaohong,Kang Junyong,Cai Duanjun

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep34766.pdf

Reference28 articles.

1. Britnell, L. et al. Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers. Nano Letters 12, 1707–1710 (2012).

2. Orofeo, C. M., Suzuki, S. & Hibino, H. Ultrathin Chemical Vapor Deposition (CVD)-Grown Hexagonal Boron Nitride as a High-Quality Dielectric for Tunneling Devices on Rigid and Flexible Substrates. Journal of Physical Chemistry C 118, 3340–3346 (2014).

3. Ci, L. et al. Atomic layers of hybridized boron nitride and graphene domains. Nature Materials 9, 430–435 (2010).

4. Li, L. H., Cervenka, J., Watanabe, K., Taniguchi, T. & Chen, Y. Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets. Acs Nano 8, 1457–1462 (2014).

5. Li, L. H. & Chen, Y. Atomically Thin Boron Nitride: Unique Properties and Applications. Adv. Funct. Mater. 26, 2594–2608 (2016).

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