Direct observation of a widely tunable bandgap in bilayer graphene-Reference-Cited by-同舟云学术

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Direct observation of a widely tunable bandgap in bilayer graphene

Published:2009-06 Issue:7248 Volume:459 Page:820-823
ISSN:0028-0836
Container-title:Nature
language:en
Short-container-title:Nature

Author:

Zhang Yuanbo,Tang Tsung-Ta,Girit Caglar,Hao Zhao,Martin Michael C.,Zettl Alex,Crommie Michael F.,Shen Y. Ron,Wang Feng

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/nature08105.pdf

Reference26 articles.

1. Sze, S. M. & Ng, K. K. Physics of Semiconductor Devices (Wiley-Interscience, 2006)

2. Oostinga, J. B., Heersche, H. B., Liu, X. L., Morpurgo, A. F. & Vandersypen, L. M. K. Gate-induced insulating state in bilayer graphene devices. Nature Mater. 7, 151–157 (2008)

3. Li, Z. Q. et al. Dirac charge dynamics in graphene by infrared spectroscopy. Nature Phys. 4, 532–535 (2008)

4. Wang, F. et al. Gate-variable optical transitions in graphene. Science 320, 206–209 (2008)

5. Li, Z. Q. et al. Band structure asymmetry of bilayer graphene revealed by infrared spectroscopy. Phys. Rev. Lett. 102, 037403 (2009)

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