Hybrid Cluster Precursors of the LaZrO Insulator for Transistors: Properties of High-Temperature-Processed Films and Structures of Solutions, Gels and Solids-Reference-Cited by-同舟云学术

Hybrid Cluster Precursors of the LaZrO Insulator for Transistors: Properties of High-Temperature-Processed Films and Structures of Solutions, Gels and Solids

Published:2016-07-14 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Li Jinwang,Zhu Peixin,Hirose Daisuke,Kohara Shinji,Shimoda Tatsuya

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep29682.pdf

Reference32 articles.

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3. Hennek, J., Kim, M., Kanatzidis, M., Facchetti, A. & Marks, T. Exploratory combustion synthesis: amorphous indium yttrium oxide for thin-film transistors. J. Am. Chem. Soc. 134, 9593–9596 (2012).

4. Bae, E., Kang, Y., Han, M., Lee, C. & Cho, S. Soluble oxide gate dielectrics prepared using the self-combustion reaction for high-performance thin-film transistors. J. Mater. Chem. C 2, 5695–5703 (2014).

5. Kim, Y. et al. Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films. Nature 489, 128–132 (2012).

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