High-transconductance indium oxide transistors with a lanthanum-zirconium gate oxide characteristic of an electrolyte-Reference-Cited by-同舟云学术

High-transconductance indium oxide transistors with a lanthanum-zirconium gate oxide characteristic of an electrolyte

Published:2020-02-14 Issue:6 Volume:127 Page:064504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Jinwang¹²^ORCID,Tsukada Hirokazu²³,Miyasako Takaaki²,Tue Phan Trong¹²⁴,Akiyama Kazuhiro⁵,Nakazawa Hiromi⁵,Takamura Yuzuru¹⁴^ORCID,Mitani Tadaoki¹²,Shimoda Tatsuya¹²⁴

Affiliation:

1. Center for Single Nanoscale Innovative Devices, Japan Advanced Institute of Science and Technology (JAIST), 2-13 Asahidai, Nomi, Ishikawa 923-1211, Japan

2. Japan Science and Technology Agency (JST), ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa 923-1211, Japan

3. Fine & Electrochemical Division, Mitsubishi Materials Electronic Chemicals Co., Ltd, 3-1-6 Barajima, Akita City, Akita 010-8585, Japan

4. School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

5. Central Research Institute, Mitsubishi Materials Corporation, 1002-14 Mukohyama, Naka, Ibaraki 311-0102, Japan

Funder

Japan Science and Technology Agency

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5119210

Reference18 articles.

1. High-Performance Solution-Processed Amorphous Zinc−Indium−Tin Oxide Thin-Film Transistors

2. High-performance ZnO∕ZnMgO field-effect transistors using a hetero-metal-insulator-semiconductor structure

3. High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids

4. Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics

5. High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors

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