A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep33576.pdf
Reference31 articles.
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2. Kim, C., Lee, N.-H., Kwon, Y.-K. & Kang, B. Effects of film thickness and Sn concentration on electrical properties of solution-processed zinc tin oxide thin film transistors. Thin Solid Films 544, 129–133 (2013).
3. Han, S., Choi, J. Y. & Lee, S. Y. Performance of Solution Processed Zn-Sn-O Thin-film Transistors Depending on Annealing Conditions. Trans. Electr. Electron. Mater. 16, 62–64 (2015).
4. Son, B.-G. et al. High-performance In-Zn-O thin-film transistors with a soluble processed ZrO2 gate insulator Phys. Status Solidi RRL 7, 485–488 (2013).
5. Xu, W., Wang, H., Ye, L. & Xu, J. The role of solution-processed high-k gate dielectrics in electrical performance of oxide thin-film transistors. J. Mater. Chem. C 2, 5389–5396 (2014).
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