Monolayer optical memory cells based on artificial trap-mediated charge storage and release-Reference-Cited by-同舟云学术

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Published:2017-03-24 Issue:1 Volume:8 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Lee Juwon,Pak Sangyeon^ORCID,Lee Young-Woo,Cho Yuljae^ORCID,Hong John^ORCID,Giraud Paul,Shin Hyeon Suk^ORCID,Morris Stephen M.,Sohn Jung Inn^ORCID,Cha SeungNam,Kim Jong Min

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms14734.pdf

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3. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).

4. Mak, K. et al. Tightly bound trions in monolayer MoS2 . Nat. Mater. 12, 207–211 (2012).

5. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2 . Nano Lett. 10, 1271–1275 (2010).

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