Configurable anti-ambipolar photoresponses for optoelectronic multi-valued logic gates

Abstract

Anti-ambipolar transistors (AATs) are the leading platform for the paradigm shift from binary to multi-valued logic (MVL) circuits, increasing circuit integration density and data processing capacity. However, most AATs with p–n heterojunctions present limited controllability of the transconductance peak, which is key to MVL operation. Here, we report optically configurable AAT/bi-AAT photoresponses implemented with an InSe field-effect transistor for potential MVL operations. The charge trapping and detrapping processes incorporated with manually introduced trap states form the AAT peaks. Furthermore, leveraging a symmetric device configuration, the dark current is significantly suppressed, and AAT photoresponses are highlighted. Contributed by two pathways of trap states, the AAT/bi-AAT photoresponses are switchable by incident optical wavelength. This dependence facilitates optical wavelength to be one of the logic inputs for MVL, based on which we propose circuit-free ternary logic gates in a single device that can achieve more than ∼6 and ∼19 times improved data density (1 bit per transistor) for NMAX and XNOR, compared with such circuits in a traditional binary design. This work realizes optically controlled AAT photoresponses, paving the way to exploit optical wavelength as a new degree of freedom in MVL computing, offering a route toward ultra-high-density, ultra-low-power, and optically programmable optoelectronic integrated circuits.