Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep25537.pdf
Reference54 articles.
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3. Onofrio, N., Guzman, D. & Strachan, A. Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells. Nat. Mater. 14, 440–446 (2015).
4. Menzel, S., Böttger, U., Wimmer, M. & Salinga, M. Physics of the Switching Kinetics in Resistive Memories. Adv. Funct. Mater. 25, 6306–6325 (2015).
5. Chen, J. Y., Huang, C. W., Chiu, C. H., Huang, Y. T. & Wu, W. W. Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament. Adv. Mater. 27, 5028–5033 (2015).
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