Electrical and Electrochemical Investigations on Copper Oxide-Based Monolayer and Bilayer Memristive Devices-Reference-Cited by-同舟云学术

Electrical and Electrochemical Investigations on Copper Oxide-Based Monolayer and Bilayer Memristive Devices

Published:2024-03-20 Issue:4 Volume:6 Page:2268-2280
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kundale Somnath S.¹^ORCID,Kurade Akash N.¹,Shivade Deepali S.¹,Bhosale Rutuja K.¹,Patil Pradnya P.¹,Patil Swapnil R.¹,Rokade Kasturi A.¹,More Krantiveer V.²,Roy Chowdhury Dibakar³^ORCID,Kamat Rajanish K.⁴⁵,Dongale Tukaram D.¹^ORCID

Affiliation:

1. Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India

2. Department of Chemistry, Shivaji University, Kolhapur 416004, India

3. Department of Physics, École Centrale School of Engineering, Mahindra University, Hyderabad, Telangana 500 043, India

4. Department of Electronics, Shivaji University, Kolhapur 416004, India

5. Dr. Homi Bhabha State University, 15, Madam Cama Road, Mumbai 400032, India

Funder

Science and Engineering Research Board

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01743

Reference40 articles.

2. Recent Advances in Memristive Materials for Artificial Synapses

3. Status and Prospects of ZnO-Based Resistive Switching Memory Devices

4. Investigations on resistive switching effect and time series statistical analysis of solution combustion synthesized ZnTiO3 memristive device

5. Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si

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